FIZIKA A 4 (1995) 3, 539-547
CARRIER TRAPS IN GRADED InGaAs PHOTODIODES WITH HIGH INDIUM CONTENT
NATKO B. URLI and VLADIMIR S. BANa
Ruđer Bošković Institute, POB 1016, 10001 Zagreb, Croatia,
aPhotodiode-Laserdiode, Inc., Princeton, NJ 08540, U.S.A.
Dedicated to Professor Mladen Paić on the occasion of his 90th
Received 15 June 1995
Revised manuscript received 13 September 1995
Carrier traps in In0.82Ga0.18As, introduced during manufacturing
of photodiodes by vapour phase epitaxy (VPE), have been studied by electrical
measurements. Two groups of localized energy levels associated with traps were found in
photodiodes annealed at higher temperature after fabrication: the first, at Ec-
0.14 eV, and the second located deeper, close to the middle of the energy gap.
Electrically activated dislocations by association with some impurities are responsible
for the occurrence of the deeper levels.