FIZIKA A 4 (1995) 2, 337-342

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INVESTIGATION OF REACTIVELY SPUTTERED NbN FILMS

IVAN HOTOVY, JOZEF BRCKA and JOZEF HURAN*
Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 812 19 Bratislava, Slovakia
*Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska 9, 842 39 Bratislava, Slovakia

Received 7 April 1995
Revised manuscript received 11 June 1995

We have investigated the structural properties of thin films of reactively magnetron sputtered niobium nitride (NbN) under high-temperature annealing (with annealing temperatures ranging 850 to 950 C) and with different nitrogen contents in the working gas mixture. Prepared NbN films were characterized by Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The influence of rapid thermal annealing (RTA) on a change of the structure properties and surface morphology was investigated. The correlation between technological parameters and film properties, structure and composition were established.

UDC 538.975
PACS 68.55.Jk, 81.15.Cd
Copyright by The Croatian Physical Society
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