FIZIKA A 4 (1995) 2, 191-197

size 210 kB

 

Pb/Si(111)11-H SCHOTTKY BARRIER HEIGHT

JOZEF OSVALD1, KAROL HRICOVINI2, GUY LE LAY3
and VIKTOR YU. ARISTOV3,4
1Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9,
842 39 Bratislava, Slovakia
2Laboratoire pour l'Utilisation du Rayonnement Electromagnetique, Centre Universitaire Paris-Sud, Bat. 209 D, F-91405 Orsay Cedex, France
3Centre de Recherche sur les M\' ecanismes de la Croissance Cristalline - Centre National de la Recherche Scientifique, Campus Luminy, Case 913, F-13288 Marseille Cedex 09, France
4Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Distr., Russia, 142432.

Received 7 April 1995
Revised manuscript received 2 June 1995

We studied Schottky barrier height of lead on n- and p-type ideally terminated Si(111)11-H unreconstructed surface by electrical measurements and X-ray photoelectron spectroscopy (XPS). The hydrogenation of the Si(111) surface was done by means of wet etching in HF and NH4F. The deposition of Pb was made under ultrahigh vacuum conditions. There are differences between the barrier heights from the I-V and from the XPS measurements. The reasons seem to be a bad wettability of Pb to Si(111)11-H and a possible surface reconstruction of Si under the thicker metal film.

UDC 538.93
PACS 73.30.+y
Copyright by The Croatian Physical Society
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