FIZIKA A 19 (2010) 2 , 73-82

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SCHOTTKY DIODES FABRICATED ON ELECTROCHEMICALLY-GROWN ZnO NANORODS AND MICRORODS

A. E. RAKHSHANIa, J. KOKAYa and A. Y. BUMAJDADb
aPhysics Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait
bChemistry Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait

Received 26 March 2009;    Accepted 2 June 2010
Online 12 July 2010

Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless foil from a ZnCl2 route. Well-aligned and free-standing hexagonal nanorods with 100 nm diameter and closely-packed microrods with a diameter above 1 mm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report on the fabrication of high-quality Ag-Schottky diodes formed on the oxygen-treated (002) facets of microrods. Diodes with a large barrier height (1.1 eV), low saturation current density (1.3 pA/cm2) and high rectification factor (5106 at 3 V) were fabricated. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.41014cm-3 and 1.2 cm2V-1s-1, respectively.

PACS numbers: 73.30.+y, 85.30.Kk
UDC 537.311

Keywords: hexagonal ZnO nanorods, oxygen-treated (002) facets, high-quality Ag-Schottky diodes, high rectification factor, large barrier height, low saturation current density

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