FIZIKA A 16 (2007) 1 , 39-46
EFFECT OF ANNEALING ON THE SWITCHING PROPERTIES OF CuInSeTe THIN FILMS
L. I. SOLIMANa, T. A. HENDIAa and H. A.
aNational Research Centre, Solid State Physics Department, Dokki, Cairo, Egypt
bUniversity College for Art, Scince and Education, Ain Shams University, Cairo, Egypt
Received 12 September 2005; Revised manuscript received 21 May 2007
Accepted 6 June 2007 Online 21 June 2007
The switching properties of amorphous CuInSeTe thin films have been
investigated. The amorphous quaternary semiconductor CuInSeTe thin films ~220 nm and ~330 nm
thick have been prepared by thermal evaporation of the bulk compound
under vacuum of about 10-4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and
thin films were investigated by the X-ray diffraction technique. The
compositional studies of CuInSeTe in both powder and thin films were carried out
by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the
films at different annealing temperatures (300, 350, 400, 450 and 500 K)
improves the switching characteristics and decrease the threshold voltage Vth.
The threshold switching voltage and the threshold activation energy Es
were found to decrease linearly with increasing annealing temperature. Moreover,
the threshold switching voltage decreased exponentially with temperature.
PACS numbers: 72.80.-r, 72.20.Pa, 73.61.Jc
Keywords: amorphous CuInSeTe thin film, annealing, switching characteristics,
threshold voltage, threshold activation energy