FIZIKA A 9 (2000) 4 , 153-158
DIPALI BANERJEEa, RAMENDRANARAYAN BHATTACHARYAb and KUSHALENDU GOSWAMIc
aDepartment of Physics, B. E. College (D. U.), Howrah 711103, India
bSolid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Calcutta 700032, India
cDepartment of Physics, Jadavpur University, Jadavpur, Calcutta 700032, India
Measurements of magnetoresistance of single crystals of bismuth doped with tin and lead in the temperature range 100 K to 300 K are reported. Both tin and lead have a marked effect in changing the band structure of bismuth. Temperature variations show that with the increased concentration of impurity, Dr/r0 is less dependent on temperature, and the magnetic field variation of Dr/r0 does not obey the quadratic dependence on magnetic field strength.